Optical and electrical current gain in an amorphous silicon bulk barrier phototransistor

1 March 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (3), 149-150
https://doi.org/10.1109/edl.1985.26076

Abstract

An amorphous silicon (a-Si) bulk barrier phototransistor was successfully fabricated on a glass substrate. The measured optical gain G and electrical current gain HFEare 196 percent and 11.8, respectively. Estimation and measurement methods for G and HFEare discussed.

Keywords

AMORPHOUS SILICON
PHOTOTRANSISTORS
SUBSTRATES
GLASS
CURRENT MEASUREMENT
GAIN MEASUREMENT
ELECTRIC VARIABLES MEASUREMENT
OPTICAL DEVICE FABRICATION
HYDROGEN
OPTICAL MATERIALS

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