High channel mobility in normally-off 4H-SiC buried channel MOSFETs
- 1 June 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 22 (6), 272-274
- https://doi.org/10.1109/55.924839
Abstract
We have fabricated buried channel (BC) MOSFETs with a thermally grown gate oxide in 4H-SiC. The gate oxide was prepared by dry oxidation with wet reoxidation. The BC region was formed by nitrogen ion implantation at room temperature followed by annealing at 1500/spl deg/C. The optimum doping depth of the BC region has been investigated. For a nitrogen concentration of 1×10/sup 17/ cm/sup -3/, the optimum depth was found to be 0.2 μm. Under this condition, a channel mobility of 140 cm 2 /Vs was achieved with a threshold voltage of 0.3 V. This channel mobility is the highest reported so far for a normally-off 4H-SiC MOSFET with a thermally grown gate oxide.Keywords
This publication has 7 references indexed in Scilit:
- MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet OxidationMaterials Science Forum, 2000
- Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS DevicesMaterials Science Forum, 2000
- SiC Devices with ONO Stacked DielectricsMaterials Science Forum, 2000
- Counter-doped MOSFETs of 4H-SiCIEEE Electron Device Letters, 1999
- Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytypeIEEE Electron Device Letters, 1999
- Intrinsic SiC/SiO2 Interface StatesPhysica Status Solidi (a), 1997
- Improved oxidation procedures for reduced SiO2/SiC defectsJournal of Electronic Materials, 1996