Determination of the Mole Fraction of GaP in GaAsP Single Crystal by A New X-Ray Diffraction Technique
- 1 August 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (8)
- https://doi.org/10.1143/jjap.10.1113
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Effect of a GaAsxP1−x Transition Zone on the Perfection of GaP Crystals Grown by Deposition onto GaAs SubstratesJournal of Applied Physics, 1969
- Electroluminescence of Diffused GaAs1 − xPx Diodes with Low Donor ConcentrationsJournal of Applied Physics, 1969
- Compositional X-Ray TopographyJournal of the Electrochemical Society, 1966
- The Preparation of Homogeneous and Reproducible Solid Solutions of GaP-GaAsJournal of the Electrochemical Society, 1965
- The Preparation and Properties of Vapor-Grown GaAs-GaP AlloysJournal of the Electrochemical Society, 1963
- Preparation of Solid Solutions of GaP and GaAs by a Gas Phase ReactionJournal of the Electrochemical Society, 1962