Influence of implantation temperature and surface protection on tellurium implantation in GaAs
- 15 December 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (12), 601-603
- https://doi.org/10.1063/1.1654271
Abstract
GaAs samples were implanted with tellurium at room temperature or at 150 °C and annealed to 750 °C with an SiO2 or Si3N4 protective layer. The highest electron concentrations and brightest photoluminescence were obtained for the hot implants with a Si3N4 protective layer.Keywords
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