Crystal Structures at High Pressures of Metallic Modifications of Silicon and Germanium
- 22 February 1963
- journal article
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 139 (3556), 762-764
- https://doi.org/10.1126/science.139.3556.762
Abstract
Studies of germanium and silicon by x-ray diffraction reveal that their crystal structure changes at high pressures from the semiconducting diamond-type structure to the metallic white tin structure, in analogy to the known "gray" to "white" transition in tin itself.Keywords
This publication has 4 references indexed in Scilit:
- Structure of the High-pressure Phase of Indium AntimonideNature, 1962
- Pressure induced phase transitions in silicon, germanium and some III–V compoundsJournal of Physics and Chemistry of Solids, 1962
- X-Ray Diffraction Studies in the 100 Kilobar Pressure RangeJournal of Applied Physics, 1962
- Melting and Polymorphism of Indium Antimonide at High PressuresNature, 1961