Mobility of Edge Dislocations in Single-Crystal Calcium Fluoride
- 1 December 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (13), 6090-6095
- https://doi.org/10.1063/1.1656121
Abstract
The mobility ν of edge dislocations in calcium fluoride has been measured over an applied stress τ range of 0.1–1.0 kg/mm2 and from temperatures between 25° and 100°C. The data are fitted to the relationship . The activation energy observed for dislocation mobility agrees with that for migration of fluorine ion vacancies in CaF2. Oxygen impurity is observed to harden the crystals. Interactions between oxygen ion and fluorine ion‐vacancy dipoles and the dislocation strain fields are considered responsible for some of the velocity‐stress‐temperature behavior.
Keywords
This publication has 5 references indexed in Scilit:
- Dislocation Mobility in CrystalsJournal of Applied Physics, 1965
- EFFECT OF DIVALENT METAL IMPURITY DISTRIBUTION, QUENCHING RATE, AND ANNEALING TEMPERATURE ON FLOW STRESS IN IONIC CRYSTALS (NaCl, LiF)Applied Physics Letters, 1963
- Rapid Solution Hardening, Dislocation Mobility, and the Flow Stress of CrystalsJournal of Applied Physics, 1962
- Velocities and Densities of Dislocations in Germanium and Other Semiconductor CrystalsJournal of Applied Physics, 1962
- Dislocation Velocities, Dislocation Densities, and Plastic Flow in Lithium Fluoride CrystalsJournal of Applied Physics, 1959