Electrical measurement of non-destructively p-type doped graphene using molybdenum trioxide

Abstract

We demonstrate effective non-destructive p-type doping of graphene via surface modification with molybdenum trioxide (MoO₃) thin film using electrical transport measurements. The p-type doping via MoO₃ modification of graphene leads to the downward shift of Fermi level towards the valence band. MoO₃ modified graphene retains its high charge carrier mobility, facilitating the observation of quantum Hall effect. In-situ ultraviolet photoelectron spectroscopy studies also show that air exposure of MoO₃ modified graphene reduces the doping efficiency.