Amorphous silicon containing fluorine and carbon, pure and doped with boron or phosphorus, was deposited cathodically from solutions of in acetone with . The conditions for optimum deposition were determined, and the deposits were characterized by electron microprobe x‐ray emission, electrical conductivity, and infrared absorption. Doping with phosphorus causes a change from p‐ to n‐type semiconductor behavior, with a maximum of resistivity >1013 Ω cm at the compensation point.