Angle-resolved photoemission study of theα-Sn/CdTe(100) interface
- 15 August 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (6), 3336-3343
- https://doi.org/10.1103/physrevb.36.3336
Abstract
We studied the growth of diamond structured Sn on CdTe(100) by angle-resolved photoemission spectroscopy with synchrotron radiation in the photon-energy range hν=12–34 eV. Sn grows layer by layer in the α phase on CdTe(100). The α-Sn/CdTe(100) interface is abrupt and nonreactive. We observe neither outdiffusion nor segregation of Cd in the α-Sn layer. A Schottky barrier of eV develops after the adsorption of (1/4 monolayer of α-Sn on p-type CdTe(100).
Keywords
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