Photoluminescence ofn-GaAs at transparent Schottky contacts
- 1 April 1973
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 1 (4), 219-221
- https://doi.org/10.1007/bf00884672
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Effect of Surface Electric Fields on Radiative Recombination in CdSJournal of Applied Physics, 1971
- Optical Properties of n-Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence MeasurementsJournal of Applied Physics, 1969
- Measurement of Diffusion Lengths in Direct-Gap Semiconductors by Electron-Beam ExcitationJournal of Applied Physics, 1967
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962