Disorder-induced exciton localization in a fractional monolayer ZnSe/CdSe superlattice
- 2 February 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 184-185, 293-297
- https://doi.org/10.1016/s0022-0248(98)80062-6
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Near-field optical spectroscopy of localized excitons in strained CdSe quantum dotsPhysical Review B, 1996
- Exciton localization by a fractional monolayer of ZnTe inserted in a wide CdTe quantum wellPhysical Review B, 1995
- Effect of hydrostatic pressure on strained CdSe/ZnSe single quantum wellsApplied Physics Letters, 1994
- ZnTe fractional monolayers and dots in a CdTe matrixJournal of Crystal Growth, 1994
- Atomic layer epitaxy of CdSe/ZnSe short period superlatticesJournal of Crystal Growth, 1994
- Interfacial alloy formation in ZnSe/CdSe quantum-well heterostructures characterized by photoluminescence spectroscopyApplied Physics Letters, 1993
- Photoluminescence from ultrathin ZnSe/CdSe quantum wellsApplied Physics Letters, 1993
- Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained-layer single quantum wells and superlattices on GaAs substratesJournal of Applied Physics, 1992
- The growth of ZnSe / CdSe and ZnS / CdS strained layer superlattices by MOVPEJournal of Crystal Growth, 1990
- Observation of Carrier Localization in Intentionally Disordered Gaas/Gaalas SuperlatticesPhysical Review Letters, 1986