Abstract
The relative intensities of the Lα1, β1, β2, and γ1 lines in tantalum, tungsten, iridium, and platinum were measured and corrections were applied for the partial absorption of the beam along its path and within the ionization chamber, for the partial reflection by the crystal, for the effects of voltage and absorption within the target, and for interference from adjacent lines. To verify the method of making the target correction, an experiment was performed which consisted of measuring the relative intensities of Lα1, β1, and γ1 of platinum at different angles from the face of the target. The following relative intensities were measured at 30 k.v. without correction for reflection by the crystal or absorption within the target: