Investigation of HBT oscillator noise through 1/f noise and noise upconversion studies
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 727-730 vol.2
- https://doi.org/10.1109/mwsym.1992.188088
Abstract
It was shown that the L/(f) characteristics of a heterojunction bipolar transistor (HBT) dielectric resonator oscillator can be approximated by using the HBT's low-frequency noise spectra and the oscillator upconversion factor' K'/sub FM/. Experimental studies have been used for this purpose and the measured L(f) ranged from -89 dBc/Hz to -101 dBc/Hz at a 10-kHz offset frequency. It was shown that the upconversion of the low-frequency noise is the primary cause of L(f) in the oscillator and its frequency dependence is directly affected by the low-frequency noise spectrum rather than by K'/sub FM/ itself. dL(f)/df deviates from the -30-dB/decade rate, expected for upconversion of ideal 1/f noise, due to traps in the device.Keywords
This publication has 4 references indexed in Scilit:
- 5 W monolithic HBT amplifier for broadband X-band applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low phase noise heterojunction bipolar transistor oscillatorElectronics Letters, 1990
- Comparative Study of Phase Noise in HEMT and MESFET Microwave OscillatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Location of 1/f noise sources in BJT's and HBJT's—I. theoryIEEE Transactions on Electron Devices, 1986