Electron-Spectrometric Study of Amorphous Germanium and Silicon in the Two-Phonon Region
- 31 January 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 28 (5), 301-303
- https://doi.org/10.1103/physrevlett.28.301
Abstract
The energy-loss spectra of 25-keV electrons transmitted through thin amorphous Ge and Si films have been measured in the range of very small energy losses between 25 and 400 meV. The resolution was 4 and 6 meV. The main intensity in the spectra is located at low energy and is caused by "defect-induced" two phonon excitation.Keywords
This publication has 18 references indexed in Scilit:
- Surface Vibrations of Silicon Detected by Low-Energy Electron SpectroscopyPhysical Review Letters, 1971
- Wechselwirkung von Elektronen mit Gitterschwingungen in Ammoniumchlorid und AmmoniumbromidThe European Physical Journal A, 1969
- Infrared Lattice Absorption of Silicon and GermaniumPhysica Status Solidi (b), 1968
- A Relation between the Energy Loss Spectrum of Incoherently Scattered Electrons and the Phonon Density of States in CrystalsPhysica Status Solidi (b), 1967
- Temperature Dependence of Infrared Dispersion in Ionic Crystals LiF and MgOPhysical Review B, 1966
- Optical Modes of Vibration in an Ionic Crystal SlabPhysical Review B, 1965
- Das Auflösungsvermögen des elektrostatisch-magnetischen Energieanalysators für schnelle ElektronenThe European Physical Journal A, 1964
- Theory of Optical Absorption by Vibrations of Defects in SiliconProceedings of the Physical Society, 1963
- On the Dielectric Constant of Germanium at Microwave FrequenciesProceedings of the Physical Society, 1960
- Infrared Refractive Indexes of Silicon Germanium and Modified Selenium Glass*Journal of the Optical Society of America, 1957