Properties of GaAs alloy diodes
- 31 December 1963
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 6 (6), 657-665
- https://doi.org/10.1016/0038-1101(63)90060-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Electroluminescence at p-n Junctions in Gallium PhosphideJournal of Applied Physics, 1961
- Excess Tunnel Current in Silicon Esaki JunctionsPhysical Review B, 1961
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- Gallium-Arsenide Diffused DiodesJournal of the Electrochemical Society, 1960
- A Gallium Arsenide Switching Diode†Journal of Electronics and Control, 1959
- High-Frequency Gallium Arsenide Point-Contact RectifiersBell System Technical Journal, 1959