Role of chemical potentials in surface reconstruction: A new model and phase transition of GaAs(111)2x2
- 30 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (26), 2819-2822
- https://doi.org/10.1103/physrevlett.56.2819
Abstract
The role of chemical potentials in surface reconstructions is examined and shown to be crucial for binary semiconductor srufaces such as GaAs(111)2×2. We predict that under As-rich conditions a new model, the As triangle, is the lowest-energy geometry, whereas the Ga-vacancy model is appropriate for Ga-rich conditions. A change in the relative chemical potential of Ga and As should produce a phase transition between the two structures.Keywords
This publication has 7 references indexed in Scilit:
- (2×2) reconstructions of the {111} polar surfaces of GaAsPhysical Review B, 1986
- Model-Independent Structure Determination of the InSb(111)2×2 Surface with Use of Synchrotron X-Ray DiffractionPhysical Review Letters, 1985
- Comparison between the Electronic Structures of GaAs(111) andfrom Angle-Resolved PhotoemissionPhysical Review Letters, 1984
- Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAsPhysical Review Letters, 1984
- Vacancy-Buckling Model for the (2×2) GaAs(111) SurfacePhysical Review Letters, 1984
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- Surface structures and photoluminescence of molecular beam epitaxial films of GaAsSolid-State Electronics, 1971