Low temperature mechanical properties of boron-doped silicon
- 18 May 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 68 (20), 3052-3055
- https://doi.org/10.1103/physrevlett.68.3052
Abstract
The audio-frequency mechanical properties of oscillators fabricated from boron-doped single-crystal silicon were measured as a function of temperature. The mechanical properties ( and period) are dominated by the boron impurities and cannot be attributed to glassy defects. We also found the higher strain mechanical response of these crystals to be nonlinear below 0.3 K. The strength of this nonlinearity is related to the boron concentration.
Keywords
This publication has 12 references indexed in Scilit:
- Two-level systems in the mechanical properties of silicon at low temperaturesPhysical Review Letters, 1989
- Comment on "Two-Level Systems Observed in the Mechanical Properties of Single-Crystal Silicon at Low Temperatures"Physical Review Letters, 1988
- Specific heat of silicon in the millidegree regionPhysical Review B, 1988
- Two-level systems observed in the mechanical properties of single-crystal silicon at low temperaturesPhysical Review Letters, 1987
- Phonon scattering at a crystal surface fromin situ-deposited thin filmsPhysical Review B, 1986
- Micromachining of silicon mechanical structuresJournal of Vacuum Science & Technology B, 1985
- Low frequency elastic properties of glasses at low temperatures—implications on the tunneling modelZeitschrift für Physik B Condensed Matter, 1984
- Ultrasonic attenuation by impurities in semiconductorsPhysical Review B, 1977
- Heat-Pulse Propagation in-Type Si and Ge under Uniaxial StressPhysical Review B, 1973
- Low-Temperature Thermal Resistance of-Type GermaniumPhysical Review B, 1961