Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursors
- 1 January 1995
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 29 (1-3), 154-159
- https://doi.org/10.1016/0921-5107(94)04029-4
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Kinetics of silicon carbide CVD: surface decomposition of silacyclobutane and methylsilaneThe Journal of Physical Chemistry, 1993
- Single-crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor depositionApplied Physics Letters, 1992