Influence of implanted dose on the recrystallization of Si amorphous layer

Abstract

The channeling effect technique has been used to investigate the annealing of the ’’amorphous’’ layer produced in Si by 40−keV Pb implants with fluences ranging between 5×10¹³ and 5×10¹⁵ ions/cm². The amount of residual disorder, after an anneal of 30 min at 650 °C, shows a dose dependence and increases strongly with Pb fluence, thus indicating the influence of the dissolved lead atoms in the recrystallization process.