Lattice Absorption Bands in SiC
- 1 August 1961
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 123 (3), 813-815
- https://doi.org/10.1103/physrev.123.813
Abstract
Using four phonon energies, , , , and ev, it is possible to explain, as summation bands, the ten absorption bands lying in the energy range 0.130 to 0.300 ev. Phonon energies close to three of the four given here have been obtained by an analysis of the indirect interband absorption in SiC.
This publication has 10 references indexed in Scilit:
- Lattice Absorption Bands in Indium AntimonideProceedings of the Physical Society, 1960
- Infrared Lattice Absorption of GaPPhysical Review B, 1960
- Anharmonic Forces in the GaP CrystalPhysical Review B, 1960
- Lattice Vibrations in Silicon and GermaniumPhysical Review Letters, 1959
- Lattice Absorption Bands in SiliconProceedings of the Physical Society, 1959
- Infrared Properties of Hexagonal Silicon CarbidePhysical Review B, 1959
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958
- Normal Modes of Germanium by Neutron SpectrometryPhysical Review B, 1958
- Preparation of Crystals of Pure Hexagonal SiCJournal of the Electrochemical Society, 1958
- Fine Structure in the Absorption-Edge Spectrum of GePhysical Review B, 1957