Channeling of Phosphorous Ions in Silicon

Abstract

Profiles of channeled ³¹P ions over the energy range 30–600 keV have been measured in 〈100〉, 〈111〉, and 〈110〉 Si. The maximum range R_max of the channeled ions is nearly the same for the 〈100〉 and 〈111〉 directions and is significantly greater for the 〈110〉 direction.