Double heterojunction PbS-PbS1−xSex-PbS laser diodes with cw operation up to 96 K
- 1 June 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (11), 669-671
- https://doi.org/10.1063/1.88616
Abstract
Double heterojunction PbS‐PbS1−xSex‐PbS laser diodes have been fabricated by hot‐wall molecular beam epitaxy. The lasers had stripe geometry of 100‐μm width formed by MgF2 passivation. Structures for electron and hole injection, respectively, are compared. Devices with 1‐μm‐thick active layers showed threshold current densities of about 400 A/cm2 at 77 K and 1.4×104 A/cm2 at 190 K. cw operation could be realized up to 96 K.Keywords
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