Contact resistance of LPCVD W/Al and PtSi/W/Al metallization
- 1 June 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (6), 209-211
- https://doi.org/10.1109/edl.1984.25890
Abstract
The sensitivity of measured specific contact resistivity to surface doping concentration has been investigated for selectively deposited LPCVD W contacts to n+ and p +Si with surface concentrations from 1018to 1020cm-3. W contact resistance to n+ Si is about a factor of 20 lower than that of Al; W contact resistance to p +Si is comparable to that of Al. Ultralow resistance, stable contacts with self-aligned PtSi, and W to p +Si are demonstrated.Keywords
This publication has 3 references indexed in Scilit:
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