Secondary Defects of As+ Implanted Silicon Measured by Thermal Wave Technique

Abstract

As⁺ implanted layers have considerable residual defects even after annealing treatment. The evaluation of the defects of impurity layers has been very important for such micro-devices as VLSI, and TEM analysis has been extensively investigated. In this paper, As⁺ implanted silicon after annealing was measured by the thermal wave technique. Samples of doses higher than 1×10¹⁵ cm^-2 have more highly increased secondary damage. The defects can be annealed out considerably at 800°C, and higher temperature annealing is very effective to decrease this secondary damage.