Contact and interconnect formation on compound semiconductor devices by ionized-cluster beam deposition
- 1 December 1976
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 39, 227-235
- https://doi.org/10.1016/0040-6090(76)90640-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Ionized-cluster beam depositionJournal of Vacuum Science and Technology, 1975
- Ohmic Contacts to Solution-Grown Gallium ArsenideJournal of Applied Physics, 1969
- Variation of Contact Resistance of Metal-GaAs Contacts with Impurity Concentration and Its Device ImplicationJournal of the Electrochemical Society, 1969
- Electrical and Electroluminescent Properties of Gallium Phosphide DiffusedJunctionsPhysical Review B, 1966