Current Oscillation Related to N=3 Subband Levels up to Room Temperature in InGaAs/InAlAs MQW Diodes
- 1 October 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (10A), L1603
- https://doi.org/10.1143/jjap.26.l1603
Abstract
A clear current oscillation related to the n=3 subband levels was observed up to room-temperature in the forward I-V characteristic of the InGaAs/InAlAs MQW diodes, as well as a current oscillation related to the n=2 subband levels. A significant hysteresis characteristic was also observed for the current oscillation related to the n=3 subband levels at 77 K. The energy difference between the n=1 and n=2 subband levels estimated from the I-V characteristic agrees with that obtained from the absorption spectrum.Keywords
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