Epitaxial regrowth of intrinsic, 31P-doped and compensated (31P+11B-doped) amorphous Si

Abstract

The rate of solid‐phase epitaxial regrowth of implantation amorphized 〈100〉 Si was studied in intrinsic, phosphorus‐doped and compensated (boron‐ and phosphorus‐doped) materials. The anneals were performed in flowing Ar gas in the temperature range from 477 to 576 °C, and the regrowth was analyzed by 2.2‐MeV ⁴He⁺ channeling techniques. The intrinsic and compensated samples exhibited nearly equal growth rates with thermal‐activation energies of 2.85 eV (intrinsic) and 2.8 eV (compensated). The growth rate in the ³¹P‐doped (constant concentration of 1.7×10²⁰ cm⁻³) was enhanced by a factor of 6 to 8, while little change in the activation energy was observed.