The theory of recoil implantation
- 1 January 1969
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 2 (1), 47-50
- https://doi.org/10.1080/00337576908235579
Abstract
The basic physical principles underlying the technique of recoil implantation are discussed in some detail. The number of recoils as a function of recoil energy passing from an evaporated layer into the substrate is calculated for a particular case; and the final penetration distribution within the substrate is compared with that expected for a direct implantation. The number and distribution of unwanted contaminant impurities which inevitably recoil into the substrate during direct implantation through an oxide layer, is also discussed.Keywords
This publication has 3 references indexed in Scilit:
- II. The energy spectrum of ejected atoms during the high energy sputtering of goldPhilosophical Magazine, 1968
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- The energy spectra of atoms slowing down in structureless mediaPhilosophical Magazine, 1965