Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (1), 13-15
- https://doi.org/10.1109/55.215085
Abstract
High-speed, digital alloy barrier-based, Al(Sb,As)/AlSb/InAs heterostructure field-effect transistors (HFETs) fabricated using a standard mesa process are demonstrated. Current gain cutoff frequencies f/sub T/ of 38.5 GHz were extracted from the measured scattering parameters for devices with a 0.6- mu m gate length and a 3- mu m source-to-drain separation. A significant output conductance depressed f/sub max/ to 40 GHz. The results show the feasibility and potential of InAs/AlSb-based HFETs for high-speed electronics applications.Keywords
This publication has 8 references indexed in Scilit:
- Surface donor contribution to electron sheet concentrations in not-intentionally doped InAs-AlSb quantum wellsApplied Physics Letters, 1992
- High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistorsIEEE Electron Device Letters, 1992
- High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriersIEEE Electron Device Letters, 1992
- A temperature noise model for extrinsic FETsIEEE Transactions on Microwave Theory and Techniques, 1992
- An InAs channel heterojunction field-effect transistor with high transconductanceIEEE Electron Device Letters, 1990
- Chapter 2 Device Applications of Strained-Layer EpitaxyPublished by Elsevier ,1990
- dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation-doped field-effect transistorsApplied Physics Letters, 1989
- Current-gain cutoff frequency comparison of InGaAs HEMTsIEEE Electron Device Letters, 1988