High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition
- 26 June 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (26), 3920-3922
- https://doi.org/10.1063/1.126821
Abstract
We report on effective hole mobility in SiGe-based metal–oxide–semiconductor (MOS) field-effect transistors grown by low-energy plasma-enhanced chemical vapor deposition. The heterostructure layer stack consists of a strained Si0.17Ge0.83 alloy channel on a thick compositionally-graded Si0.52Ge0.48 buffer. Structural assessment was done by high resolution x-ray diffraction. Maximum effective hole mobilities of 760 and 4400 cm2/Vs have been measured at 300 and 77 K, respectively. These values exceed the hole mobility in a conventional Si p-MOS device by a factor of 4 and reach the mobility data of conventional Si n-MOS transistors.Keywords
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