Multiple thermal oxidation of silicon and the electrophysical properties of silicon oxide films and the Si-SiO2 bonding layer
- 1 May 1976
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 34 (1), 91-93
- https://doi.org/10.1016/0040-6090(76)90138-3
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Some Aspects of Structure Sensitive Properties of Semiconductor-Insulator Interface SystemsJournal of Vacuum Science and Technology, 1969