A DLTS study of the effects of boron counterdoping on the gap states in n-type hydrogenated amorphous silicon
- 30 June 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 50 (11), 991-994
- https://doi.org/10.1016/0038-1098(84)90272-2
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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