Form Factors and Ultraviolet Spectra of Semiconductors at High Pressure

Abstract

Using the observed pressure dependence of a small set of band edges in Ge and Si, the pressure dependence of the pseudopotential form factors is deduced. Using these pressure-dependent form factors, the energy band structure and ultraviolet spectra are computed as a function of applied pressure. The results appear to give very reasonable agreement when compared with the observed pressure dependence of the reflectivity.