A PbTiO3 thin film has been grown on Pt or Pt-coated Si wafer by chemical vapor deposition instead of rf sputtering which makes a surface of substrate damaged. As the source material of the deposition, two kinds of combinations of (PbCl2 and TiCl4) and (PbO and Ti(C4H9O)4) have been tried to know the effect of chlorine inclusion in the PbTiO3 network. The surface of the film is much smoother than that of the film prepared by the rf sputtering, and deposition rate is several µm/hr. The deposited film structure is mostly oriented to or direction which depends on the source material and the deposition condition. The maximum dielectric constant of the film is 130, and D-E hysteresis characteristic has been also obtained.