Reactivity sputtered tantalum thin film resistors Part 1. Physical and electrical properties
- 31 August 1971
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 8 (2), 81-100
- https://doi.org/10.1016/0040-6090(71)90001-0
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Formation of f.c.c., b.c.c. and β-tantalum films by evaporationThin Solid Films, 1968
- Preparation, Structure, and Properties of Sputtered, Highly Nitrided Tantalum FilmsJournal of Applied Physics, 1968
- The mechanism of reactive sputteringJournal of Materials Science, 1968
- Effect of Background-Gas Impurities on the Formation of Sputtered β-Tantalum FilmsJournal of Applied Physics, 1967
- Deposition of Tantalum, Tantalum Oxide, and Tantalum Nitride with Controlled Electrical CharacteristicsJournal of Applied Physics, 1966
- Electrical and Structural Properties of Epitaxial bcc Tantalum FilmsJournal of Applied Physics, 1966
- A NEW STRUCTURE IN TANTALUM THIN FILMSApplied Physics Letters, 1965
- Effects of Nitrogen, Methane, and Oxygen on Structure and Electrical Properties of Thin Tantalum FilmsJournal of Applied Physics, 1964
- Electron Microscope Observations of the Crystallization of Anodically Formed Tantalum and Niobium Oxide FilmsJournal of the Electrochemical Society, 1964
- A PROPOSED STRUCTURE FOR ANNEALED ANODIC OXIDE FILMS OF TANTALUMCanadian Journal of Chemistry, 1962