Temperature dependence of the stacking-fault energy in pure silver

Abstract
The weak-beam method of electron microscopy has been successfully applied to measurement of the variation of separations of Shockley partials of single dissociated dislocations in pure silver during in situ thermal cycling experiments in a HVEM. The temperature dependence of the stacking-fault energy γ has been determined unambiguously in the temperature range from room temperature to 500°C. It is shown that γ decreases with increasing temperature in a reversible manner; γ500°C is smaller by about 30 % than γR.T..