A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING THE ION-SCATTERING TECHNIQUE
- 1 July 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (1), 23-26
- https://doi.org/10.1063/1.1653237
Abstract
By bombarding samples with 1.1‐MeV 4He+ ions and observing the energy spectra of the backscattered ions, it has been possible to determine the concentrations and lattice locations of arsenic and antimony impurities diffused into silicon. For the samples investigated it was found that only 60–75% of the arsenic atoms were in substitutional sites, even at impurity concentrations well below solid solubility. About 90% of the antimony atoms were found to be in substitutional sites.Keywords
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