Electron barrier height change and its influence on EEPROM cells
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (5), 244-246
- https://doi.org/10.1109/55.145041
Abstract
The effect of floating polysilicon doping on electron injection barrier height and therefore the PROGRAM/ERASE window of an electrically erasable programmable ROM (EEPROM) cell has been studied. The introduction of dopant and the concentration of electrically active sites at the floating-gate polysilicon/tunnel oxide interface influence the electron injection barrier height during cell ERASE operation. The electron injection barrier increases up to 250 meV upon degenerate doping of the floating-gate polysilicon electrode as measured by dark current-voltage characteristics. The application of these observations in this study is in the design and scaling of EEPROM cells.Keywords
This publication has 2 references indexed in Scilit:
- Measurements of the p-n product in heavily doped epitaxial emittersIEEE Transactions on Electron Devices, 1984
- Low-voltage single supply CMOS electrically erasable read-only memoryIEEE Transactions on Electron Devices, 1980