Non-Ohmic Properties in n-Type InSb
- 1 August 1967
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 23 (2), 290-305
- https://doi.org/10.1143/jpsj.23.290
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Evidence for absence of electrons from conduction band in N-InSb at low temperaturesSolid State Communications, 1967
- Nonlinear Galvanomagnetic Effect ofn-Type InSb in the Quantum LimitPhysical Review B, 1966
- Resistance Anomaly in-Type InSb at Very Low TemperaturesPhysical Review Letters, 1966
- Theory of Low-Temperature Breakdown in Compensated GermaniumJournal of the Physics Society Japan, 1965
- Oscillatory Magnetoabsorption in InSb Under High ResolutionJournal of Applied Physics, 1961
- The Cryosar-A New Low-Temperature Computer ComponentProceedings of the IRE, 1959
- Magnetically induced impurity banding in n-InSbJournal of Physics and Chemistry of Solids, 1958
- Effect of a magnetic field on donor impurity levels in InSbJournal of Physics and Chemistry of Solids, 1956
- Hydrogen atom in a strong magnetic fieldJournal of Physics and Chemistry of Solids, 1956