High-brightness green-emitting electroluminescent devices with ZnS:Tb,F active layers
- 9 June 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (23), 1570-1571
- https://doi.org/10.1063/1.96870
Abstract
The dependence of brightness on the concentration ratio of fluorine to terbium was studied in thin-film electroluminescent devices with rf-sputtered ZnS:Tb,F active layers. It was found that the device exhibits a maximum brightness at the concentration ratio of about 1. By optimizing not only the concentration ratio but also the terbium concentration, a brightness more than 300 fL is obtained under 1 kHz pulse excitation.Keywords
This publication has 2 references indexed in Scilit:
- Electroluminescence of ZnS Lumocen Devices Containing Rare-Earth and Transition-Metal FluoridesJournal of Applied Physics, 1969
- ELECTROLUMINESCENCE OF RARE-EARTH AND TRANSITION METAL MOLECULES IN II-VI COMPOUNDS VIA IMPACT EXCITATIONApplied Physics Letters, 1968