SURFACE INVERSION AND ACCUMULATION OF ANODIZED InSb
- 15 October 1965
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 7 (8), 210-212
- https://doi.org/10.1063/1.1754382
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Physical limitations on the frequency response of a semiconductor surface inversion layerSolid-State Electronics, 1965
- Surface capacity of oxide coated semiconductorsSolid-State Electronics, 1965
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Calculation of the Capacitance of a Semiconductor Surface, with Application to SiliconIBM Journal of Research and Development, 1964
- Photoelectric emission and work functions of InSb, GaAs, Bi2Te3 and germaniumJournal of Physics and Chemistry of Solids, 1959
- Contact Potential Difference Measurements by the Kelvin MethodProceedings of the Physical Society. Section B, 1957
- The Kinetics and Mechanism of Formation of Anode Films on Single-Crystal InSbJournal of the Electrochemical Society, 1957
- -Type Surface Conductivity on-Type GermaniumPhysical Review B, 1953