Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS
- 2 August 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (5), 625-627
- https://doi.org/10.1063/1.109970
Abstract
We report on the electronic passivation of n‐ and p‐type GaAs using chemical vapor deposited cubic GaS. Au/GaS/GaAs fabricated metal‐insulator‐semiconductor (MIS) structures exhibit classical high‐frequency capacitor versus voltage (C‐V) behavior with well‐defined accumulation and inversion regions. Using high‐ and low‐frequency C‐V, the interface trap densities of ∼1011 eV−1 cm−2 on both n‐ and p‐type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.Keywords
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