Formation of multiple quantum wires by strain-induced lateral-layer ordering process
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4), 900-903
- https://doi.org/10.1016/0022-0248(93)90756-m
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Formation of lateral quantum wells in vertical short-period superlattices by strain-induced lateral-layer ordering processApplied Physics Letters, 1992
- Quantum wire lasersProceedings of the IEEE, 1992
- Advantage of Strained Quantum Wire LasersJapanese Journal of Applied Physics, 1992
- Compositional modulation and long-range ordering in GaP/InP short-period superlattices grown by gas source molecular beam epitaxyApplied Physics Letters, 1990
- Optical properties of III–V semiconductor quantum wires and dotsJournal of Luminescence, 1990
- Fabrication and characterization of quantum well wires grown on corrugated GaAs substrates by molecular beam epitaxyApplied Physics Letters, 1990
- Polarized band-edge photoluminescence and ordering inPPhysical Review Letters, 1989
- Scaling laws and minimum threshold currents for quantum-confined semiconductor lasersApplied Physics Letters, 1988
- Elastic state and thermodynamical properties of inhomogeneous epitaxial layers: Application to immiscible III-V alloysJournal of Applied Physics, 1987
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982