X-ray photoelectron spectroscopy study of the interfacial reactivity of Si with the oxidized GaAs (100) surface
- 24 December 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (26), 2794-2796
- https://doi.org/10.1063/1.104198
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Initial stages of heterojunction formation: Si on GaAs(111)Journal of Vacuum Science & Technology A, 1990
- The effects of subcutaneous oxidation at the interfaces between elemental and compound semiconductors and SiO2 thin films deposited by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology B, 1989
- Control of compound semiconductor–insulator interfaces by an ultrathin molecular-beam epitaxy Si layerJournal of Vacuum Science & Technology B, 1989
- Structural characterization of III–V semiconductor surfaces by quantitative aesSurface and Interface Analysis, 1989
- Evidence for the occurrence of subcutaneous oxidation during low temperature remote plasma enhanced deposition of silicon dioxide filmsJournal of Vacuum Science & Technology A, 1989
- Unpinned GaAs MOS capacitors and transistorsIEEE Electron Device Letters, 1988
- GaAs MIS structures with SiO2 using a thin silicon interlayerElectronics Letters, 1988
- Surface structure and interface formation of Si on GaAs(100)Journal of Vacuum Science & Technology B, 1987
- Interfacial chemical reactivity of metal contacts with thin native oxides of GaAsJournal of Vacuum Science and Technology, 1981
- Reactivity and interface chemistry during Schottky-barrier formations: Metals on thin native oxides of GaAs investigated by x-ray photoelectron spectroscopyApplied Physics Letters, 1981