Semiconductor-laser self pulsing due to deep level traps
- 1 January 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (25), 809-810
- https://doi.org/10.1049/el:19780546
Abstract
By adding a rate equation for the charge state of deep-level traps to the rate equations for electron and photon density, it is shown that the observed self pulsing observed in semiconductor lasers can be due to the presence of deep-level traps with less than 1017 cm−3 density.Keywords
This publication has 2 references indexed in Scilit:
- HETEROSTRUCTURE MATERIALSPublished by Elsevier ,1978
- Transient Effects in Laser DiodesPublished by Elsevier ,1977