Analysis of ρxx minima in surface quantum oscillations on (100) n-type silicon inversion layers
- 1 May 1978
- journal article
- Published by Elsevier in Surface Science
- Vol. 73, 70-80
- https://doi.org/10.1016/0039-6028(78)90471-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Valley splitting in an n-channel (100) inversion layer on p-type siliconSurface Science, 1976
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- Theory of Oscillatory g Factor in an MOS Inversion Layer under Strong Magnetic FieldsJournal of the Physics Society Japan, 1974
- Theory of Quantum Transport in a Two-Dimensional Electron System under Magnetic Fields. I. Characteristics of Level Broadening and Transport under Strong FieldsJournal of the Physics Society Japan, 1974
- Transport properties of conduction electrons in n-type inversion layers in (100) surfaces of siliconJournal of Physics and Chemistry of Solids, 1974
- Experimental Study of Oscillatory Values ofof a Two-Dimensional Electron GasPhysical Review Letters, 1973
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968