Planar diffused gallium arsenide millimeter-wave varactor diodes

1 June 1967

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 55 (6), 1104-1105
https://doi.org/10.1109/proc.1967.5749

Abstract

Diffused p-n junction diodes with measured zero-bias cutoff frequencies to values in excess of 2000 GHz have been made by planar techniques. Their fabrication and properties are described.

Keywords

GALLIUM ARSENIDE
VARACTORS
LENSES
SEMICONDUCTOR DIODES
SCHOTTKY DIODES
MILLIMETER WAVE TECHNOLOGY
MILLIMETER WAVE TRANSISTORS
FABRICATION
MILLIMETER WAVE MEASUREMENTS

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