Spin relaxation in semiconductor quantum dots
Top Cited Papers
- 15 May 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 61 (19), 12639-12642
- https://doi.org/10.1103/physrevb.61.12639
Abstract
We have studied spin-flip processes in GaAs electron quantum dots that accompany transitions between different discrete energy levels. Several different mechanisms that originate from spin-orbit coupling are shown to be responsible for such processes. We have evaluated the rates for all mechanisms with and without a magnetic field. We have shown that the spin relaxation of the electrons localized in the dots differs strikingly from that of the delocalized electrons. The most effective spin-flip mechanisms related to the absence of the inversion symmetry appear to be strongly suppressed for localized electrons. This results in unusually low spin-flip rates.Keywords
All Related Versions
This publication has 10 references indexed in Scilit:
- Quantum computation with quantum dotsPhysical Review A, 1998
- Excitation Spectra of Circular, Few-Electron Quantum DotsScience, 1997
- Quasiparticle Lifetime in a Finite System: A Nonperturbative ApproachPhysical Review Letters, 1997
- Introduction to Mesoscopic Electron TransportPublished by Springer Nature ,1997
- Electrons in artificial atomsNature, 1996
- Competing channels in single-electron tunneling through a quantum dotPhysical Review Letters, 1993
- Two-photon spectroscopy of MgO:Physical Review B, 1991
- Carrier Scattering in Metals and SemiconductorsPhysics Today, 1988
- Quantum Theory of SolidsAmerican Journal of Physics, 1965
- Factor and Donor Spin-Lattice Relaxation for Electrons in Germanium and SiliconPhysical Review B, 1960