Low temperature channeling measurements of ion implantation lattice disorder in GaAs†

Abstract

Lattice disorder resulting from 140 keV Zn and 151 keV Xe implantations below 100 °K was studied by channeling effect analysis using 400 keV protons. Implantations and analyses were performed in the same system without warmup. Isochronal anneal curves show significant annealing of disorder below room temperature for low temperature, low fluence implants. The annealing is similar for both Zn and Xe implants and also is similar to previous measurements of the annealing of thermal conductivity following low temperature electron irradiation. For 298 °K implants, the disorder production is strongly dose rate dependent and increases significantly with increasing dose rate. For dose rates used in these measurements, the disorder production at 298 °K was greatly reduced from that for the low temperature implantations.