Effect of the Crystal Orientation upon Electron Mobility at the Si-SiO2 Interface
- 1 May 1969
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 8 (5), 629
- https://doi.org/10.1143/jjap.8.629
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise in p-Type Inversion Layers on Oxidized Silicon SurfacesJapanese Journal of Applied Physics, 1969
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Stabilization of SiO2 Passivation Layers with P2O5IBM Journal of Research and Development, 1964